This paper addresses the modeling of certain rate-dependent mechanisms which contribute to hysteresis inherent to piezoelectric materials operating at low frequencies. While quasistatic models are suitable for initial material characterization in some applications, the reduction in coercive field and polarization values which occur as frequencies increase must be accommodated to achieve the full capabilities of the materials. The model employed here quantifies the hysteresis in two steps. In the first, anhysteretic polarization switching is modeled through the application of Boltzmann principles to balance the electrostatic and thermal energy. Hysteresis is then incorporated through the quantification of energy required to translate and bend domain walls pinned at inclusions inherent to the materials. The performance of the model is illustrated through a fit to low frequency data (0.1 Hz - 1 Hz) from a PZT5A wafer.
展开▼
